| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has higher performance of transistor characteristics through improvement in driving power, a decrease in sub-threshold coefficient, reduction of an off current, and reduction of a driving voltage, and is reduced in power consumption. SOLUTION: The semiconductor device includes: a conductive electrode 103 provided on a substrate 101; an insulating film 104 provided on the conductive electrode 103; a semiconductor 105 provided above the conductive electrode 103 with the insulating film 104 interposed; and conductive regions 109 provided on both sides of the semiconductor 105 in contact with the insulating film 104. COPYRIGHT: (C)2009,JPO&INPIT
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