| 摘要 |
An image sensor and a manufacturing method thereof are provided to inspect correctly a micro lens and to improve reliability of a product by forming a dummy pattern of the micro lens at an outside thereof. An image sensor includes a cell region(CA) and an outer region(PA). The image sensor comprises photodiode structures, a planarization layer, first micro lenses(161), second micro lenses(162), first dummy patterns(161a) of the first micro lenses, and second dummy patterns(162a) of the second micro lenses. The photodiode structures are formed in the cell region of a semiconductor substrate(110). The planarization layer is formed on a front surface of the semiconductor substrate. The first and second micro lenses are formed alternately on the cell regions of the planarization layer. The first dummy patterns of the first micro lenses are formed on a first monitoring region(D1) in the outer region. The second dummy patterns of the second micro lenses are formed on a second monitoring region(D2) which is different from the first monitoring region.
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