| 摘要 |
An isolation layer manufacturing method of a semiconductor device is provided to prevent effectively difficulties of a manufacturing process by adjusting a silicon etch speed of a substrate with an ion implantation process in order to manufacture shallow trenches having different levels of trench depth by performing a trench etch process once. An insulating layer is laminated on an upper part of a semiconductor substrate(100). An insulating layer pattern for defining at least two or more isolation layer regions is formed by patterning the insulating layer. A masking process is performed to form a mask pattern for masking one substrate region of the isolation layer regions and opening the other substrate region of the isolation layer regions. An ion implantation process is performed to implant ions into the opened other substrate region. The mask pattern is removed. At least, two shallow trenches having different levels of depth are formed by etching the substrate region exposed by the insulating layer pattern.
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