发明名称 A rapid gate discharge circuit for a switch in a rectifier or inverter
摘要 A switch T in a rectifier or inverter is driven by a signal derived from the AC line 1,2. In order to achieve rapid gate discharge of T, and thus prevent shoot-through in the converter, a low value shunt resistor R3 is provided. The switch may be a MOSFET, IGBT, or thyristor.
申请公布号 GB2455754(A) 申请公布日期 2009.06.24
申请号 GB20070024825 申请日期 2007.12.20
申请人 ENECSYS LIMITED 发明人 LESLEY CHISENGA;ANDRABADU VIRAJ
分类号 H03K17/04;H02M1/38;H02M7/5381;H02M7/797 主分类号 H03K17/04
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