| 摘要 |
A semiconductor memory device and a manufacturing method thereof are provided to improve a process margin by preventing generation of a bridge or a pinch between a bit line and a contact pad. A bit line(210) and a metal contact pattern(212) are formed on an upper surface of a semiconductor substrate. A first interlayer dielectric is formed on the semiconductor substrate including the bit line and the metal contact pattern. A contact pad(220) is formed on the first interlayer dielectric. The contact pad comes in contact with the metal contact pattern. The second interlayer dielectric is formed on the resultant including the contact pad. The metal line penetrates the second interlayer dielectric. The metal line is connected with the contact pad through the second interlayer dielectric.
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