| 摘要 |
<p>A manufacturing method of a semiconductor device is provided to obtain a desired level of height and to improve characteristics of a protrusion type gate by adjusting height and width of a protrusion type pattern. An active part(AR) and an isolation layer(102) for insulating the active part are formed on an upper surface of a semiconductor substrate(100). The active part is partially etched by using a pattern mask. Grooves(H1, H2) are formed in the active part by the etching partially the active part. A loss prevention pattern is formed to fill up the grooves. A part of the isolation layer adjacent to the active part is etched by using the loss prevention pattern and the pattern mask, in order to protect the active part. The loss prevention pattern and the pattern mask are removed from the active part.</p> |
