| 摘要 |
An apparatus and a method for etching an edge of a wafer are provided to improve a straight characteristic of reaction gas in a dry etch process for an edge of a wafer by installing a reaction gas injection hole at the edge of the wafer. An apparatus for etching an edge of a wafer includes a chuck(12), a bottom electrode(14), an upper electrode(15), and an insulator(16). A rear surface of a wafer(11) including patterns is loaded on the chuck. A lower electrode is coupled between the chuck and an isolation ring(13). The lower electrode is formed to receive RF power in order to generate plasma. An upper electrode is positioned on an upper surface of the wafer. The upper electrode is formed to receive the RF power in order to generate the plasma. The upper electrode has a reaction gas injection hole(17). The insulator is coupled with a lower part of the upper electrode. The reaction gas injection hole is extended to the insulator. The insulator is formed in a predetermined interval from an upper surface of the wafer. The reaction gas injection hole is formed at an edge region of the wafer.
|
