| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to stably maintain a driving voltage by forming a short channel semiconductor device which minimizes a gate resistance. A dummy gate is formed on a substrate(105). A source/drain region(125) is formed on the substrate of both sides of the dummy gate. A first spacer(130) is formed in both sides of the dummy gate. A second insulation film(135) is formed in both sides of the first spacer. A second spacer(140) is formed in both sides of a trench. A gate insulation film(150) is formed in an inner surface of the trench which comprises the first spacer, the second spacer, and the substrate. A gate electrode(155) is formed by filling a conductive material in the trench.</p> |
