摘要 |
A micro semiconductor-type pressure sensor and a manufacturing method thereof are provided. The micro semiconductor-type pressure sensor is implemented by etching a cavity-formation region of a substrate to form a plurality of trenches, oxidizing the plurality of trenches through a thermal oxidation process to form a cavity-formation oxide layer, forming a membrane-formation material layer on upper portions of the cavity-formation oxide layer and the substrate, forming a plurality of etching holes in the membrane-formation material layer, removing the cavity-formation oxide layer through the plurality of etching holes to form a cavity buried in the substrate, forming a membrane reinforcing layer on an upper portion of the membrane-formation material layer to form a membrane for closing the cavity, and forming sensitive films made of a piezoresisive material on an upper portion of the membrane. |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;CHOI, CHANG AUCK;JE, CHANG HAN;HWANG, GUNN;KIM, YOUN TAE;JUNG, SUNG HAE;LEE, MYUNG LAE;LEE, SUNG SIK;MOON, SEOK HWAN |
发明人 |
CHOI, CHANG AUCK;JE, CHANG HAN;HWANG, GUNN;KIM, YOUN TAE;JUNG, SUNG HAE;LEE, MYUNG LAE;LEE, SUNG SIK;MOON, SEOK HWAN |