| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device increasing a light-emitting region, enhancing the luminance and capable of being formed with high yield using a laminating technology, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor light emitting device includes an insulating substrate 10, an n-type semiconductor layer 12 doped with n-type impurities and disposed on the insulating substrate 10, an activating layer 14 disposed on the n-type semiconductor layer 12, a p-type semiconductor layer 16 doped with p-type impurities and disposed on the activating layer 14, a transparent electrode 18 disposed on the p-type semiconductor layer 16, a reflecting laminate film 20 disposed on the transparent electrode 18, a transparent substrate 24 disposed on the reflecting laminate film 20, an n-side electrode 8 obtained by removing part of the insulating substrate 10 and disposed on the surface of the n-type semiconductor layer 12, and a p-side electrode 22 obtained by removing part of the transparent substrate 24 and reflecting laminate film 20 and disposed on the surface of the transparent electrode 18.Also, the method of manufacturing the device is included. <P>COPYRIGHT: (C)2009,JPO&INPIT |
