| 摘要 |
PROBLEM TO BE SOLVED: To enable formation of a fine pattern having a high dimensional accuracy by a transfer technique without using complicated manufacturing steps. SOLUTION: An a-Si film 3 and an Si oxide film 4 are sequentially formed in this order so as to cover the side and upper surfaces of a core material pattern 2, and thereafter these films are etched back to form sidewalls of the core material pattern 2. The a-Si film 3 and the Si oxide film 4 remain on the sidewalls, so that the sidewalls 5 can be prevented from having varying widths. Thus an accuracy can be increased when a TEOS film 1 as an underlying layer is patterned with use of the sidewalls 5 as a mask. COPYRIGHT: (C)2009,JPO&INPIT
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