发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND PROCESS OF MANUFACTURING THE SAME |
摘要 |
In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film. |
申请公布号 |
US2009149011(A1) |
申请公布日期 |
2009.06.11 |
申请号 |
US20090367590 |
申请日期 |
2009.02.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAEGASHI TOSHITAKE;UENO KOKI |
分类号 |
H01L21/3205;H01L21/76;H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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