| 摘要 |
A magnetic memory cell structure with thermal assistant includes a magnetic pinned layer, a barrier layer, a magnetic free layer, a perpendicular magnetic layer, and a heating layer sequentially stacked. The magnetic free layer has a longitudinal magnetization. The perpendicular magnetic layer has a perpendicular magnetization at a first temperature and is perpendicularly coupling to the longitudinal magnetization of the magnetic free layer. The perpendicular magnetic layer is in a paramagnetic state at a second temperature. The present invention further includes magnetic dynamic random access memory.
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