| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has high heat dissipation and low inductance and also can maintain reliability of a thin wiring layer on a substrate. <P>SOLUTION: A semiconductor device includes a semiconductor switching element 12U on an upper arm side arranged on an upper arm and a semiconductor switching element 12L at a lower arm side arranged on a lower arm. A source terminal of the semiconductor switching element 12U on the upper arm side and a drain terminal of the semiconductor switching element 12L on the lower arm side are connected through a first wiring 14 consisting of the wiring layer. Also, the semiconductor device includes a second wiring 10 connected in parallel with the first wiring, while a current component of low frequency is flown more easily in the second wiring 10 than in the first wiring at the switching operation using the semiconductor switching element. <P>COPYRIGHT: (C)2009,JPO&INPIT |
