| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate bipolar transistor having switching characteristics improved by avoiding cracking failures, since the total thickness of a substrate is thin, and the cracking failures are thereby frequently caused and a yield is deteriorated during a manufacturing process, in a conventional NPT-IGBT. SOLUTION: A p++ type semiconductor layer 3 and an n-type semiconductor layer 1 are laminated, and an insulating region 2 is selectively disposed on their boundary. Since the insulating region serves as a barrier layer of holes injected to the n-type semiconductor layer from the p++ type semiconductor layer, even if impurity concentration of the p++ type semiconductor layer is high and its thickness is thick, the amount of holes injected into the n-type semiconductor layer can be controlled (suppressed). As a result, since a hole drawing time during the off time can be shortened, switching characteristics (speed) can be improved, and the thickness of the substrate can be kept thick, the cracking failures can be prevented from being caused. Furthermore, since a lifetime killer is not used, the temperature characteristics in the switching characteristics can be stabilized. COPYRIGHT: (C)2009,JPO&INPIT
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