| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an electrode coming into excellent ohmic contact with both a p-type region and an n-type region exposed on a surface of an Si semiconductor layer. <P>SOLUTION: An AlSi layer 42 is formed in a portion of a range where the p-type region is exposed on an lower surface 2b (surface) of the Si semiconductor layer 2, n-type impurities are injected from the lower surface 2b of the Si semiconductor layer 2 within a range where the AlSi layer 42 is not formed to change the p-type region within the range into an n-type region, and a Ti layer 44, an Ni layer 46 and Au layer 48 are stacked in order on an lower surface 2b of the AlSi layer 42 and an lower surface 2b of the n-type region. <P>COPYRIGHT: (C)2009,JPO&INPIT |
