| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristics of a minute electromechanical device. SOLUTION: The minute electromechanical device has a semiconductor layer (1), a cavity (15a) formed in the upper part of the semiconductor layer, a gate electrode (17) formed on the cavity and a plurality of source and drain pairs (13sa, 13da, etc.) formed in the semiconductor layer positioned on the underside of the cavity. The gate electrode is so constituted as to be movable in the direction of the semiconductor layer, and regions between paired sources and drains are so constituted respectively that a current between the source and the drain can be measured independently. The device is so constituted that any one of the source and drain pairs is selected and a force applied onto the gate electrode is detected from the current flowing between a source region and a drain region in the selected pair. According to this constitution, it is possible to select, out of the source and drain pairs in a plurality, the source and drain pair which shows a linear characteristic of the current flowing between the paired source and drain in relation to the force applied to the gate electrode, and thus the accuracy of detection can be improved. COPYRIGHT: (C)2009,JPO&INPIT
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