| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor array substrate which is superior in reliability and which can attain cost reduction, while realizing a narrower frame. <P>SOLUTION: A method of manufacturing the thin film transistor array substrate includes: forming a pattern made of a first conductive film 10; stacking a gate insulating film 2, a semiconductor layer 4, and a resist in this order; forming a resist pattern 41 having a step structure in a thickness direction; forming an exposed area of the first conductive film 10 and a pattern of the semiconductor layer 4 by using the resist pattern 41; forming a pattern made of a second conductive film 20 in contact with the first conductive film 10 in the exposed area of the first conductive film 10; and covering the second conductive film 20 by an upper layer film. The first and the second conductive films 10 and 20 have a conductive film connection region, where the first and the second conductive films come into direct contact with each other via an aperture part formed in the gate insulating film 2, and the second conductive film 20 is covered by the upper layer film. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
