| 摘要 |
<p>A silicon oxide film, which has less film thickness dependency on pattern density and has uniform film thickness, is formed while maintaining merits of plasma oxidation process under low pressure and low oxygen concentration conditions. In a process chamber of a plasma processing apparatus, silicon on the surface having an uneven pattern on an object to be processed is oxidized by having plasma of a processing gas operate to the silicon, and a silicon oxide film is formed. The plasma is formed under the conditions with an oxygen ratio of 0.1% or more but not more than 10% in a processing gas at a pressure of 0.133Pa or more but not more than 133.3Pa. The process is performed by having a plate, which is provided with a plurality of penetrating openings, between a plasma generating region and the object to be processed in the processing chamber.</p> |
