| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor apparatus capable of preventing occurrence of cracks in an insulating film between layers under a pad, without reducing a wiring density of the next wiring layer below a surface layer on which a pad for external connection is formed. <P>SOLUTION: A thickness of a wiring 3a, passing under a region of a pad 1 among wirings formed on the next layer below a surface layer, is set smaller than that of a wiring 3b which is arranged deviating from under the region of the pad 1. <P>COPYRIGHT: (C)2009,JPO&INPIT |
