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发明名称
Verfahren zur Herstellung eines Transistors mit drei Zonen aus verschiedenen Halbleitermaterialien abwechselnden Leitungstyps
摘要
申请公布号
DE1090326(B)
申请公布日期
1960.10.06
申请号
DE1958I014548
申请日期
1958.03.14
申请人
INTERNATIONAL STANDARD ELECTRIC CORPORATION
发明人
NANNICHI YASUO
分类号
H01L21/18;H01L29/00
主分类号
H01L21/18
代理机构
代理人
主权项
地址
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