发明名称 |
Semiconductor device having a trench gate and method of fabricating the same |
摘要 |
A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is etched to form a first trench having a first depth using the trench etch mask as a shield. Impurities are doped into the semiconductor substrate through the first trench to form a doped region. The doped region and the semiconductor substrate underlying the first trench are etched to form a second trench having a second depth greater than the first depth, wherein the second trench has a sidewall and a bottom. A gate insulating layer is formed on the sidewall and the bottom of the second trench. A trench gate is formed in the second trench.
|
申请公布号 |
US7541244(B2) |
申请公布日期 |
2009.06.02 |
申请号 |
US20060491704 |
申请日期 |
2006.07.24 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
LIN JENG-PING;LEE PEI-ING |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|