| 摘要 |
A manufacturing method of a semiconductor device is provided to prevent a leakage current of a floating gate by using a dielectric film having a high dielectric constant as a dielectric film between a floating gate and a control gate in a flash memory device. A floating gate film is formed on a semiconductor substrate(S100). A nitride oxide film is formed on the floating gate film(S110). A dielectric film having a high dielectric constant is formed on the nitride oxide film(S120). A nitride film is formed on the dielectric film(S130). A control gate film is formed on the nitride film(S140). The dielectric film is formed on the semiconductor substrate by depositing at least one selected from groups composed of HfO2, Al2O3, and compound thereof by an atomic layer deposition process.
|
