发明名称 CAPACITY ELEMENT AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To prevent disconnection of an electrode at high-temperature treatment by a low cost method, in a hole-type capacitive element. SOLUTION: The capacity element includes a first lower electrode 14 formed on a support substrate 11; an interlayer insulating film 15 which is formed on the support substrate 11, which is on the first lower electrode 14 as well; an opening 16 which is formed in the interlayer insulating film 15 to reach the first lower electrode 14; a second lower electrode 17 covering the sidewall of the opening 16; a third lower electrode 18 covering the first lower electrode 14 and the second lower electrode 17, at such portion as bring exposed in the opening 16; a capacity insulting film 19 formed on the third lower electrode 18; and an upper electrode 20 formed on the capacity insulating film 19. The upper part of the second lower electrode 17 is thinner than its lower part, while the upper part of the third lower electrode 18 is thicker than its lower part, at the sidewall of the opening 16. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009117514(A) 申请公布日期 2009.05.28
申请号 JP20070287197 申请日期 2007.11.05
申请人 PANASONIC CORP 发明人 NASU TORU
分类号 H01L21/8246;H01L27/105 主分类号 H01L21/8246
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