发明名称 |
Method and apparatus for inspecting reticle |
摘要 |
The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer. An apparatus for inspecting a reticle for inspecting two reticles that are used in order to form patterns in the same layer on a substrate using the double patterning technology has: a coordinate information input unit for inputting coordinate information of a pattern of a measuring object; an image input unit for acquiring images of patterns of the two reticles based on the obtained coordinate information; an image overlay unit for overlaying the images of the two reticles at the same coordinates; a relative position calculation unit for finding the relative position between the patterns on the two reticles; an evaluation unit for assigning an index of the overlaying accuracy based on the relative position and evaluates whether the two reticles need repair; and an evaluation result output unit for outputting an evaluation result.
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申请公布号 |
US2009136116(A1) |
申请公布日期 |
2009.05.28 |
申请号 |
US20080292660 |
申请日期 |
2008.11.24 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
OKAI NOBUHIRO;OKAZAKI SHINJI;SOHDA YASUNARI;NAKAYAMA YOSHINORI |
分类号 |
G06K9/00;G03F1/84;H01L21/027 |
主分类号 |
G06K9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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