| 摘要 |
Provided is a pixel array structure and of a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of arranging the same in which unit pixels are arranged diagonally to adjacent unit pixels in a row and column direction. For the arrangement, a pixel array in even rows is shifted to a half of a pitch in a column direction with respect to a pixel array in odd rows. Accordingly, in a pixel array implemented in a diagonal pattern, a distance between optical sensing elements can be larger, so that optical sensing elements with larger regions can be obtained. In addition, pixel transistor circuit units constructed with MOS transistors can be arranged between the optical sensing elements, so that a photo sensitivity and a resolution can be markedly increased.
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