| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent birds beak oxidization at an end of a tunnel insulating film, without affecting the element characteristics. SOLUTION: The semiconductor device is provided with a silicon substrate 11; an active region which is surrounded by a device isolating trench 16, formed in the surface of the silicon substrate 11; a non-volatile memory cell including a tunnel insulating film 12, a charge storage layer 13, an inter-electrode insulation film 21; a control gate electrode 22, which are sequentially provided on the active region; an element isolation insulating film 20, whose upper surface is higher than the upper surface of the tunnel insulating film 12, in order to be embedded in the device isolating trench 16 and cover the side surface of the tunnel insulating film 12; and a liner film which is provided along the bottom surface and the side surface of the device isolating trench 16 and is separated from the bottom surface and the side surface by the element isolation insulating film 20, and includes a silicon film 18'. COPYRIGHT: (C)2009,JPO&INPIT
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