| 摘要 |
PROBLEM TO BE SOLVED: To provide a practicable reduced surface field type LDMOS acquiring a predetermined on-resistance at a predetermined breakdown voltage. SOLUTION: A semiconductor apparatus includes: a semiconductor layer of a first conductivity type impurity; a local insulating layer 7 formed on the semiconductor layer; a drain layer 8 of a second conductivity type impurity; and a source layer 11 formed while sandwiching the local insulating layer; and a gate electrode 13 formed over the semiconductor layer extending from over the local insulating layer to the source layer. The semiconductor layers below the drain layer, below the local insulating layer and below the gate electrode include: a low-concentration diffusion layer of the second conductivity type impurity lower in concentration than that of the drain layer; a first gate insulating film between the gate electrode and the semiconductor layer, extending from an end on the source layer side of the gate electrode toward the local insulating layer without reaching the local insulating layer; and a second gate insulating film between the gate electrode and the semiconductor layer, extending from an end on another side of the local insulating layer toward the source layer to be connected to the first gate insulating film, and having a film thickness thicker than that of the first gate insulating film and thinner than half of the thickness of the local insulating layer. COPYRIGHT: (C)2009,JPO&INPIT
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