Power amplifier having cascode architecture with separately controlled MOS transistor and parasitic bipolar transistor,申请号EP20040021027-传众专利搜索

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发明名称	Power amplifier having cascode architecture with separately controlled MOS transistor and parasitic bipolar transistor
摘要
申请公布号	EP1524765(B1)	申请公布日期	2009.05.27
申请号	EP20040021027	申请日期	2004.09.03
申请人	BROADCOM CORPORATION	发明人	BEHZAD, ARYA;ITO, AKIRA
分类号	H03F1/22	主分类号	H03F1/22
代理机构		代理人
主权项
地址

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