| 摘要 |
A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.
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