METHOD OF FORMING THE TRENCH ISOLATION LAYER FOR SEMICONDUCTOR DEVICE,申请号KR20070118593-传众专利搜索

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发明名称	METHOD OF FORMING THE TRENCH ISOLATION LAYER FOR SEMICONDUCTOR DEVICE
摘要
申请公布号	KR20090052069(A)	申请公布日期	2009.05.25
申请号	KR20070118593	申请日期	2007.11.20
申请人	HYNIX SEMICONDUCTOR INC.	发明人	CHO, JONG HYE;CHO, WHEE WON;MYUNG, SEONG HWAN;KIM, SUK JOONG
分类号	H01L21/762	主分类号	H01L21/762
代理机构		代理人
主权项
地址

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