| 摘要 |
PROBLEM TO BE SOLVED: To provide methods for formation of epitaxial layers containing n-doped silicon. SOLUTION: Formation of the n-doped epitaxial layer in semiconductor devices, for example, metal oxide semiconductor field effect transistor (MOSFET) devices involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second temperature higher than that during deposition and a pressure higher than that during deposition. COPYRIGHT: (C)2009,JPO&INPIT
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