| 摘要 |
PROBLEM TO BE SOLVED: To plan to reduce a process number, while fully reducing a leakage current. SOLUTION: A resist layer formation process of forming a resist layer 15 on an insulating film 13 is performed. The resist layer 15 includes: a first resist portion 16 which is formed on the insulating film 13 so as to cover at least a crystalline semiconductor layer 12; an opening 17 which is formed in the first resist portion 16 so that the insulating film 13 may be exposed in a part of a region where the crystalline semiconductor layer 12 is formed; and a second resist portion 18 which is formed around the first resist portion 16 and is thicker than the first resist portion 16. Thereafter, while doping only an n-type or a p-type impurity element into regions other than a formation region of the opening 17 to the crystalline semiconductor layer 12, a gettering region formation process of forming a gettering region is performed by doping the impurity element into the formation region of the opening 17. COPYRIGHT: (C)2009,JPO&INPIT
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