发明名称 |
Chemical mechanical polishing pad with controlled wetting |
摘要 |
Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising a polishing texture that exhibits a dimensionless roughness, R, is between 0.01 and 0.75. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.
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申请公布号 |
US7530887(B2) |
申请公布日期 |
2009.05.12 |
申请号 |
US20070839874 |
申请日期 |
2007.08.16 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. |
发明人 |
JIANG BO;MULDOWNEY GREGORY P.;PALAPARTHI RAVICHANDRA V. |
分类号 |
B24D11/00;B24D99/00 |
主分类号 |
B24D11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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