METHOD FOR CRYSTALLIZATION OF HETEROSTRUCTURES InGaAs/Іn0,2Al0,3Ga0,5As, WITH QUANTUM DOTS InAs/InGaAs

摘要

A method for crystallization of heterostructures InGaAs/ІnAlGaAs, with quantum dots heteroInAs/InGaAs comprises successive growth on a substrate GaAs of metamorphic buffer InGaAs, p- and n-emitters ІnAlGaAs. Forming of quantum dots on surface of epitaxial layers InGaAs (ІnAlGaAs) are realized involving atoms of gadolinium in quantity of 5.0∙10smto 2.0∙10sm.