| 摘要 |
A pattern data generation method according to an example of the present invention includes based on design pattern data of a circuit including a plurality of MIS transistors having the same gate size, identifying types of the plurality of MIS transistors, setting size specs for gate patterns of the plurality of MIS transistors, the size specs being different for different types of the MIS transistors, and verifying whether gate patterns of the MIS transistors predicted by simulation using mask pattern data for forming the MIS transistors satisfy the size specs.
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