| 摘要 |
A method of manufacturing a semiconductor light emitting device using surface plasmon resonance are provided to resonate lights from a quantum well layer with surface plasmon of a metal layer by separating an active layer from the metal layer by a predetermined distance. A method of manufacturing a semiconductor light emitting device using surface plasmon resonance includes the steps of: growing a buffer layer(12), an n type semiconductor layer(13), an active layer(14), and a p type semiconductor layer(15) on a sapphire substrate(11); forming a regular corrugated structure by etching the upper surface of the p type semiconductor selectively; forming a metal layer(16) on the p type semiconductor layer; exposing a part of the n type semiconductor layer by mesa-etching the metal layer, the p type semiconductor layer, and the active layer; and forming a p side bonding electrode(17b) and a n side electrode(17a) on some area at the top surface of the metal layer and on the exposed surface of the n type semiconductor layer. The corrugated structure is formed on the interface between the p type semiconductor layer and the metal layer to switch surface plasmon waves existing on the interface into lights radiating out of the semiconductor light emitting device, particularly in an active layer direction. The active layer is separated from the metal layer for surface plasmon resonance. A concave part of the corrugated structure is distant away from the active layer by a predetermined distance. |
