发明名称 INTERCONNECT STRUCTURE AND PROCESS OF MAKING THE SAME
摘要 A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top of at least one of the one or more via openings covered by the first liner; and forming a second liner covering the trenching openings and at least part of the first liner. An interconnect structure formed by the method is also provided.
申请公布号 KR20090045198(A) 申请公布日期 2009.05.07
申请号 KR20097001301 申请日期 2007.05.18
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 STANDAERT THEODORUS E.;DAVIS PEGEEN M.;FITZSIMMONS JOHN A.;GRECO STEPHEN E.;KO TZE MAN;LUSTIG NAFTALI E.;NICHOLSON LEE M.;SANKARAN SUJATHA
分类号 H01L21/768;H01L21/28;H01L21/283;H01L21/4763 主分类号 H01L21/768
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