发明名称 |
INTERCONNECT STRUCTURE AND PROCESS OF MAKING THE SAME |
摘要 |
A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top of at least one of the one or more via openings covered by the first liner; and forming a second liner covering the trenching openings and at least part of the first liner. An interconnect structure formed by the method is also provided. |
申请公布号 |
KR20090045198(A) |
申请公布日期 |
2009.05.07 |
申请号 |
KR20097001301 |
申请日期 |
2007.05.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
STANDAERT THEODORUS E.;DAVIS PEGEEN M.;FITZSIMMONS JOHN A.;GRECO STEPHEN E.;KO TZE MAN;LUSTIG NAFTALI E.;NICHOLSON LEE M.;SANKARAN SUJATHA |
分类号 |
H01L21/768;H01L21/28;H01L21/283;H01L21/4763 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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