ETCHING METHOD AND METHOD FOR MANUFACTURING OPTICAL/ELECTRONIC DEVICE USING THE SAME

摘要

Disclosed is a semiconductor etching method which enables to easily etch a semiconductor layer that is composed of, for example, a hardly etchable group III-V nitride semiconductor by a relatively simple process. This etching method is characterized by comprising a step for forming a metal fluoride layer (3) on the surface of a base (1, 2) as at least a part of an etching mask, a step for processing the metal fluoride layer with a liquid, and a step for etching the base using the metal fluoride layer as a mask.