发明名称 |
Acoustic devices using an AlGaN piezoelectric region |
摘要 |
Provided is a method of forming an acoustic based device, including forming an AlGaN region having a first surface and a second surface. A first electrode is deposited on the first surface of the AlGaN region, and then a second electrode is deposited on a second surface of the AlGaN-region. In another aspect of the present application, the AlGaN region is formed by an epitaxial layer overgrowth process.
|
申请公布号 |
US7528681(B2) |
申请公布日期 |
2009.05.05 |
申请号 |
US20050312035 |
申请日期 |
2005.12.20 |
申请人 |
PALO ALTO RESEARCH CENTER INCORPORATED |
发明人 |
KNOLLENBERG CLIFFORD F.;KNEISSL MICHAEL;JOHNSON NOBLE M. |
分类号 |
H03H9/25;H03H3/02;H03H9/54 |
主分类号 |
H03H9/25 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|