| 摘要 |
Provided are a ferroelectric thin film formation composition, a ferroelectric thin film and a method of fabricating a ferroelectric thin film, the ferroelectric thin film formation composition being capable of effectively preventing occurrence of a striation and expanding the range of choice of a sol composition. A ferroelectric thin film formation composition containing a metal compound that is a material to form a ferroelectric thin film contains a hydrophobic compound which includes a reactive group reacting with a hydroxy group and in which at least an end side of a remnant exclusive of the reactive group has a hydrophobic property wherein the reactive group is at least one of a silane halide, a hydroxysilane and an alkoxysilane. Thus, it is possible to expand the range of choice of the sol composition while effectively suppressing occurrence of the striation.
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