发明名称 |
Radiation source, lithographic apparatus and device manufacturing method |
摘要 |
A radiation source comprises an anode and a cathode that are configured and arranged to create a discharge in a gas or vapor in a space between anode and cathode and to form a plasma pinch so as to generate electromagnetic radiation. The gas or vapor may comprise xenon, indium, lithium and/or tin. The radiation source may comprise a plurality of discharge elements, each of which is only used for short intervals, after which another discharge element is selected. The radiation source may also comprise a triggering device, which device can facilitate improving the exact timing of the pinch formation and thus the pulse of EUV radiation. The radiation source may also be constructed to have a low inductance, and operated in a self-triggering regime.
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申请公布号 |
US7528395(B2) |
申请公布日期 |
2009.05.05 |
申请号 |
US20030664065 |
申请日期 |
2003.09.17 |
申请人 |
ASML NETHERLANDS B.V. |
发明人 |
KOSHELEV KONSTANTIN NIKOLAEVITCH;BANINE VADIM YEVGENYEVICH;IVANOV VLADIMIR VITAL'EVITCH;KIEFT ERIK RENE;LOOPSTRA ERIK ROELOF;STEVENS LUCAS HENRICUS JOHANNES;SIDELKOV YURII VICTOROVITCH;KOLOSHNIKOV VSEVOLOD GRIGOREVITCH;KRIVTSUN VLADIMIR MIHAILOVITCH;GAYAZOV ROBERT RAFILEVITCH;FRIJNS OLAV WALDEMAR VLADIMIR |
分类号 |
G03B27/42;G21K5/00;F28D15/02;G03F7/20;G21K5/02;G21K5/08;G21K5/10;H01J37/08;H01L21/027;H05G2/00;H05H1/24 |
主分类号 |
G03B27/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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