| 发明名称 |
SEMICONDUCTOR APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, AND JOINT MATERIAL |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To actualize a semiconductor apparatus without using lead by die bonding a chip using a bonding material without using lead having a reflow resistance of about 260°C and a high reliability under thermal cycle. <P>SOLUTION: A die bonding portion is metallically bonded with well-conductive Cu metal powders 5 with a maximum particle diameter of about 15 μm to 200 μm and adhesive layers of Ag 8,11,12 and minute holes 9 are evenly dispersed in a bonding layer 10. With this structure, the reflow resistance of about 260°C and reliability under thermal cycle test can be ensured without using lead. <P>COPYRIGHT: (C)2009,JPO&INPIT |
| 申请公布号 |
JP2009094341(A) |
申请公布日期 |
2009.04.30 |
| 申请号 |
JP20070264412 |
申请日期 |
2007.10.10 |
| 申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
KAJIWARA RYOICHI;ITO KAZUTOSHI;OKA HIROTAKE;NAKAJO TAKUYA;TANIFUJI YUICHI |
| 分类号 |
H01L21/52;C09J9/02;C09J11/04;H01B1/00;H01B1/22;H01L23/48 |
主分类号 |
H01L21/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
