| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a semiconductor light-emitting device using a nano-scale columnar crystal structure so-called as nano-column or nano-rod in which a difficulty of an electrode forming process is avoided. <P>SOLUTION: Not by a conventional method in which electrodes are provided in the both sides in a longitudinal direction of the columnar crystal structure and by passing a current through a p-type layer, an activated layer and an n-type layer, a light is emitted, but according to the present invention, by a method comprising: separating a nano-column LED 2 having a p-type layer 2c, an activated layer 2b and an n-type layer 2a from a growing substrate such as silicon as shown in Fig.2(a); retaining the nano-column LED 2 by fixing it with an epoxy resin shown in Fig. 2(b); and applying an alternating current electric field to the nano-column LED 2 by electrodes 11, 12 and a power source 13 to excite a carrier in the nano-column LED 2, a light is emitted as shown in Fig.2(c). Accordingly, the semiconductor light-emitting device can be produced inexpensively and stably by omitting a process for forming an electrode in the nano-column LED 2 and without necessity for using a high-cost technology which is difficult to be produced such as a quantum dot. <P>COPYRIGHT: (C)2009,JPO&INPIT |
