| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To successfully form a polar electrode within a fine aperture in a semiconductor device so-called CSP. <P>SOLUTION: In a manufacturing method, a wiring 7 is formed first on a protective film 5 formed on a semiconductor wafer 21. Next, an overcoating film 10 formed, for example, of a photosensitive positive polyimide resin is formed on the upper surface of the protective film 5 including the wiring 7. Next, a circular aperture 11 is formed, by the photolithography method, to the overcoating film 10 at a part corresponding to a connecting pad of the wiring 7. Here, the overcoating film 10 on the wiring 7 has a thickness of about 10μm and the diameter of the aperture 11 is about 10μm. Next, a polar electrode 12 formed of copper is formed by a metal film forming method so-called the Metal Chloride Reduction Chemical Vapor Deposition (MCR-CVD) method on the upper surface of connecting pad of wiring 7 within the aperture 11 of the overcoating film 10. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
