| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a resistive random access memory device which allows simultaneous multi-bit writing. <P>SOLUTION: The resistive random access memory device includes a cell array having a plurality of parallel word lines WL (WL1, WL2, ...), a plurality of bit lines BL (BL1, BL2, ...) intersecting with the word lines, and resistive random access memory cells disposed on intersection parts of the word lines and the bit lines and allowing reversible setting of resistance; a word line driving circuit which provides a selective driving voltage to a selected word line selected from among the plurality of word lines of the cell array; and a bit line driving circuit which drives the plurality of bit lines so as to simultaneously set both a set mode where a transition from a first resistance state to a second resistance state is caused and a reset mode where a transition from the second resistance state to the first resistance state on the memory cells selected by the selected word line. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
