MAGNETIC STORAGE DEVICE USING DOMAIN STRUCTURE OF FERROMAGNETIC SUBSTANCE AND MULTIPLE STATE

摘要

PROBLEM TO BE SOLVED: To simplify the structure of a magnetic recording element, to shorten processes, to reduce a production unit price, to also provide a huge planar hall effect utilizing a multiple domain state further, and to provide a storage device measuring magnetoresistance and recording information in the multiple state by simultaneously utilizing a ferromagnetic semiconductor layer (MS) itself where magnetic information is recorded as a sensor layer. SOLUTION: The magnetic storage device includes: a substrate 110; a ferromagnetic semiconductor layer 120 formed on the substrate 110 for storing and sensing the multiple state through the planar hall effect or a magnetoresistance value using the multiple domain state; an insulating film 130 formed on the ferromagnetic semiconductor layer; a first current line 140 formed on the insulating film; an insulating film 150 formed on the first current line; and a second current line 160 formed on the insulating film. COPYRIGHT: (C)2009,JPO&INPIT