| 摘要 |
PROBLEM TO BE SOLVED: To prevent the agglomeration in a silicide on a thinning gate electrode and, at the same time, thin the silicide, in the manufacture of a semiconductor device. SOLUTION: In a gate electrode 12 and an upper portion of a source drain region 15 of an NMOS transistor, and a gate electrode 22 and a source drain region 25 of a PMOS transistor, Ni silicide films 12s, 15s, 22s and 25s are formed by self-alignment, respectively. In the Ni silicide films 12s, 15s, 22s and 25s, Ni and Si are used as main ingredients, and stoichiometric composition is NiSi or NiSi<SB>2</SB>. However, they contain one or more elements among Pt, V, Pd, Zr, Hf and Nb in the amount of solid solutions less than 10 at% in total. COPYRIGHT: (C)2009,JPO&INPIT
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