发明名称 Method for vertical interconnection inside 3D electronic modules using vias
摘要 <p>The method involves stacking wafers (1) to superimpose zones of curved segments e.g. circle arc, of electrical connection tracks. Vias are pierced in an insulating resin along a direction of the stacking, and directly above spaces that are surrounded by the zones to form the vias. A wall of the vias is metallized by electrolytic growth. The stacking of the wafers is cut along cutting paths to form three-dimensional electronic modules, where the width of the cut of stacking is higher than the width of an electrode interconnecting the tracks.</p>
申请公布号 EP2053646(A1) 申请公布日期 2009.04.29
申请号 EP20080167277 申请日期 2008.10.22
申请人 3D PLUS 发明人 VAL, CHRISTIAN
分类号 H01L25/10;H01L21/56;H01L21/60;H01L21/98;H01L23/58 主分类号 H01L25/10
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