| 摘要 |
A metal wiring of the semiconductor device and a method of formation thereof can increase the line width of the effective wire and improve the resistance of the metal wiring. The insulating layer(102) is formed on the semiconductor substrate(100). The insulating layer has the damascene pattern(D). The WNx film(104) for the barrier is formed on the insulating layer according to the surface of the insulating layer. The W layer(106) is formed on the WNx film. The damascene pattern can be formed with the single structure. The damascene pattern can be formed with the dual structure. The WNx film can be formed by one or more among the CVD method and ALD method.
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